Files
2026-01-18 23:59:45 -05:00

178 lines
4.1 KiB
Markdown
Raw Permalink Blame History

This file contains invisible Unicode characters
This file contains invisible Unicode characters that are indistinguishable to humans but may be processed differently by a computer. If you think that this is intentional, you can safely ignore this warning. Use the Escape button to reveal them.
# AS6C62256 32K x 8 Low-Power CMOS SRAM Specification
## 1. Overview
The **AS6C62256** is a **256 Kbit (32K x 8)** low-power CMOS static random-access memory (SRAM) manufactured by Alliance Memory (and second-sourced by others). It is fully compatible with common 28-pin SRAM pinouts and is widely used in **6502**, **Z80**, and other 8-bit microprocessor systems for read/write memory.
The device offers fast access times, simple control logic, and very low standby power consumption.
---
## 2. General Characteristics
| Feature | Description |
| ----------------- | --------------------------------- |
| Memory size | 256 Kbits (32 KB) |
| Organization | 32,768 x 8 bits |
| Data bus | 8-bit |
| Address bus | 15-bit (A0-A14) |
| Technology | CMOS SRAM |
| Access time | 55 ns / 70 ns (variant dependent) |
| Operating voltage | 5 V ± 10% |
| Standby current | < 1 µA (typical) |
| Package types | DIP-28, SOJ-28, TSOP-28 |
---
## 3. Pin Configuration (Logical)
### 3.1 Address Pins (A0-A14)
* Select one of 32,768 memory locations
* Address must be stable during read or write cycle
### 3.2 Data Pins (I/O0-I/O7)
* Bidirectional tri-state data bus
* High-impedance when not enabled
### 3.3 Control Pins
| Pin | Description |
| --- | -------------------------- |
| CE# | Chip Enable (active low) |
| OE# | Output Enable (active low) |
| WE# | Write Enable (active low) |
| VCC | +5 V power supply |
| GND | Ground |
---
## 4. Memory Organization
* Linear address space from `$0000` to `$7FFF`
* Each address corresponds to one byte (8 bits)
```text
Address range: 0000h - 7FFFh
Data width: 8 bits
```
---
## 5. Read Operation
### 5.1 Read Cycle Conditions
| Signal | State |
| ------ | ----- |
| CE? | LOW |
| OE? | LOW |
| WE? | HIGH |
* Data becomes valid after access time (tAA)
* Outputs remain valid while CE? and OE? are LOW
* Outputs are high-impedance when CE? or OE? is HIGH
---
## 6. Write Operation
### 6.1 Write Cycle Conditions
| Signal | State |
| ------ | ----------- |
| CE? | LOW |
| OE? | HIGH or LOW |
| WE? | LOW pulse |
* Data is written on the rising edge of WE? or CE?
* Address and data must be stable during write window
* No internal write delay (true SRAM behavior)
---
## 7. Timing Notes (Summary)
| Parameter | Typical |
| -------------------- | -------- |
| Address access (tAA) | 55-70 ns |
| CE? access (tACE) | 55-70 ns |
| OE? access (tOE) | 25-35 ns |
| Write cycle time | ≥ 55 ns |
---
## 8. Power Modes
### 8.1 Active Mode
* CE? = LOW
* Normal read/write operation
### 8.2 Standby Mode
* CE? = HIGH
* Data retained
* Very low power consumption
---
## 9. Reset and Power-Up Behavior
* No reset pin required
* Data is undefined at power-up
* Memory contents preserved only while VCC is present
---
## 10. Typical System Integration (6502 Example)
```text
Mapped at: $0000 - $7FFF
CE?  decoded address
OE?  R/W?
WE?  inverted R/W?
```
---
## 11. Absolute Maximum Ratings (Summary)
| Parameter | Rating |
| ------------- | --------------------- |
| VCC | -0.5 V to +6.5 V |
| Input voltage | -0.5 V to VCC + 0.5 V |
| Storage temp | -65 °C to +150 °C |
---
## 12. Compatible and Equivalent Devices
| Device | Notes |
| --------- | --------------- |
| AS6C62256 | Alliance Memory |
| CY62256 | Cypress |
| HM62256 | Hitachi |
| KM62256 | Samsung |
| IS62C256 | ISSI |
---
## 13. Common Use Cases
* Main RAM for 6502 / Z80 systems
* Video buffers and frame memory
* Embedded systems requiring fast R/W memory
* Retrocomputer SBC designs
---
## 14. References
* <https://www.alliancememory.com/wp-content/uploads/AS6C62256-23-March-2016-rev1.2.pdf>
* <https://www.futurlec.com/Datasheet/Memory/62256.pdf>
* <https://www.malinov.com/sergeys-blog/homebrew-notes.html>
---