New skill for building legacy hardware cicuit mockups

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# AS6C62256 32K x 8 Low-Power CMOS SRAM Specification
## 1. Overview
The **AS6C62256** is a **256 Kbit (32K x 8)** low-power CMOS static random-access memory (SRAM) manufactured by Alliance Memory (and second-sourced by others). It is fully compatible with common 28-pin SRAM pinouts and is widely used in **6502**, **Z80**, and other 8-bit microprocessor systems for read/write memory.
The device offers fast access times, simple control logic, and very low standby power consumption.
---
## 2. General Characteristics
| Feature | Description |
| ----------------- | --------------------------------- |
| Memory size | 256 Kbits (32 KB) |
| Organization | 32,768 x 8 bits |
| Data bus | 8-bit |
| Address bus | 15-bit (A0-A14) |
| Technology | CMOS SRAM |
| Access time | 55 ns / 70 ns (variant dependent) |
| Operating voltage | 5 V ± 10% |
| Standby current | < 1 µA (typical) |
| Package types | DIP-28, SOJ-28, TSOP-28 |
---
## 3. Pin Configuration (Logical)
### 3.1 Address Pins (A0-A14)
* Select one of 32,768 memory locations
* Address must be stable during read or write cycle
### 3.2 Data Pins (I/O0-I/O7)
* Bidirectional tri-state data bus
* High-impedance when not enabled
### 3.3 Control Pins
| Pin | Description |
| --- | -------------------------- |
| CE? | Chip Enable (active low) |
| OE? | Output Enable (active low) |
| WE? | Write Enable (active low) |
| VCC | +5 V power supply |
| GND | Ground |
---
## 4. Memory Organization
* Linear address space from `$0000` to `$7FFF`
* Each address corresponds to one byte (8 bits)
```text
Address range: 0000h - 7FFFh
Data width: 8 bits
```
---
## 5. Read Operation
### 5.1 Read Cycle Conditions
| Signal | State |
| ------ | ----- |
| CE? | LOW |
| OE? | LOW |
| WE? | HIGH |
* Data becomes valid after access time (tAA)
* Outputs remain valid while CE? and OE? are LOW
* Outputs are high-impedance when CE? or OE? is HIGH
---
## 6. Write Operation
### 6.1 Write Cycle Conditions
| Signal | State |
| ------ | ----------- |
| CE? | LOW |
| OE? | HIGH or LOW |
| WE? | LOW pulse |
* Data is written on the rising edge of WE? or CE?
* Address and data must be stable during write window
* No internal write delay (true SRAM behavior)
---
## 7. Timing Notes (Summary)
| Parameter | Typical |
| -------------------- | -------- |
| Address access (tAA) | 55-70 ns |
| CE? access (tACE) | 55-70 ns |
| OE? access (tOE) | 25-35 ns |
| Write cycle time | ≥ 55 ns |
---
## 8. Power Modes
### 8.1 Active Mode
* CE? = LOW
* Normal read/write operation
### 8.2 Standby Mode
* CE? = HIGH
* Data retained
* Very low power consumption
---
## 9. Reset and Power-Up Behavior
* No reset pin required
* Data is undefined at power-up
* Memory contents preserved only while VCC is present
---
## 10. Typical System Integration (6502 Example)
```text
Mapped at: $0000 - $7FFF
CE?  decoded address
OE?  R/W?
WE?  inverted R/W?
```
---
## 11. Absolute Maximum Ratings (Summary)
| Parameter | Rating |
| ------------- | --------------------- |
| VCC | -0.5 V to +6.5 V |
| Input voltage | -0.5 V to VCC + 0.5 V |
| Storage temp | -65 °C to +150 °C |
---
## 12. Compatible and Equivalent Devices
| Device | Notes |
| --------- | --------------- |
| AS6C62256 | Alliance Memory |
| CY62256 | Cypress |
| HM62256 | Hitachi |
| KM62256 | Samsung |
| IS62C256 | ISSI |
---
## 13. Common Use Cases
* Main RAM for 6502 / Z80 systems
* Video buffers and frame memory
* Embedded systems requiring fast R/W memory
* Retrocomputer SBC designs
---
## 14. References
* <https://www.alliancememory.com/wp-content/uploads/AS6C62256-23-March-2016-rev1.2.pdf>
* <https://www.futurlec.com/Datasheet/Memory/62256.pdf>
* <https://www.malinov.com/sergeys-blog/homebrew-notes.html>
---